Part Image

SI7288DP-T1-GE3 - Vishay

Description: Trans MOSFET N-CH 40V 20A 8-Pin PowerPAK SO EP T/R

Download SI7288DP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI7288DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Dual
click to zoom
3D Models
SI7288DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Dual
click to zoom

SI7288DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7288DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • Country Of Origin:

    USA

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    15.6 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7288DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7288DP-T1-GE3 is a 5x5mm QFN package with a 0.5mm pitch. A thermal pad is recommended for optimal thermal performance.
  • To ensure proper biasing, connect VCC to a stable 5V power supply, and ensure the input voltage (VIN) is within the recommended range of 4.5V to 5.5V. Also, decouple the power supply lines with 10uF and 100nF capacitors.
  • The SI7288DP-T1-GE3 is rated for operation from -40°C to 125°C (junction temperature). However, the recommended operating temperature range is -20°C to 85°C for optimal performance and reliability.
  • Handle the device by the body or use an ESD wrist strap to prevent static buildup. Use an ESD-protected workstation and follow proper ESD handling procedures to prevent damage.
  • Keep the layout compact and symmetrical to minimize noise and radiation. Route power and ground traces separately, and use a solid ground plane to reduce electromagnetic interference (EMI).

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI7288DP-T1-GE3 Overview

Use the download button to access the SI7288DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI728, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SI7288DP-T1-GE3

Showing 0 results