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SI7450DP-T1-E3 - Vishay

Description: Vishay SI7450DP-T1-E3 N-channel MOSFET Transistor, 3.2 A, 200 V, 8-Pin SOIC

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SI7450DP-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI7450DP-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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3D Models
SI7450DP-T1-E3 - Vishay - 3D model - Other - PowerPAK SO-8 Single
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SI7450DP-T1-E3 Details

  • Manufacturer Part Number:

    SI7450DP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5.2 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7450DP-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7450DP-T1-E3 is a standard SOT23-3 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its specified temperature range (-55°C to 150°C). Additionally, provide adequate heat sinking and thermal management to prevent overheating.
  • The maximum allowed voltage on the input pins of the SI7450DP-T1-E3 is 5.5V. Exceeding this voltage may cause damage to the device.
  • Yes, the SI7450DP-T1-E3 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly bypassed and decoupled to minimize electromagnetic interference (EMI).
  • Handle the SI7450DP-T1-E3 with ESD-protective equipment and follow proper ESD handling procedures to prevent damage to the device. Vishay Intertechnologies recommends using an ESD wrist strap or mat when handling the device.

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SI7450DP-T1-E3 Overview

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