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SI7450DP-T1-GE3 - Vishay

Description: MOSFETs 200V Vds 20V Vgs PowerPAK SO-8

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SI7450DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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SI7450DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8 Single
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SI7450DP-T1-GE3 Details

  • Manufacturer Part Number:

    SI7450DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    5.2 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7450DP-T1-GE3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area connected to the thermal pad, with multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet. Additionally, ensure the input voltage is within the specified range, and the output is properly decoupled with capacitors.
  • The SI7450DP-T1-GE3 has built-in ESD protection, but handling precautions are still necessary. Handle the device by the body, avoid touching the pins, and use an anti-static wrist strap or mat during assembly.
  • The SI7450DP-T1-GE3 is a commercial-grade device, but Vishay offers other variants with enhanced reliability and automotive-grade options. Consult with Vishay's application engineers to determine the best device for your specific application.
  • The thermal resistance (RθJA) is approximately 25°C/W, and the junction-to-case thermal resistance (RθJC) is approximately 5°C/W. These values are dependent on the PCB design and thermal interface material used.

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SI7450DP-T1-GE3 Overview

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Part Image SI7450DP-T1-E3 Vishay Siliconix

Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SI7450DP-T1 Vishay Siliconix

Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET