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SI7454DP-T1-E3 - Vishay

Description: VISHAY - SI7454DP-T1-E3 - MOSFET, N CH, 100V, 5A, PPAKSO-8

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PCB Footprints
SI7454DP-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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3D Models
SI7454DP-T1-E3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SI7454DP-T1-E3 Details

  • Manufacturer Part Number:

    SI7454DP-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    31 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    4.8 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7454DP-T1-E3 Frequently Asked Questions (FAQs)

  • A good PCB layout for the SI7454DP-T1-E3 should include a thermal pad connected to a large copper area to dissipate heat efficiently. Ensure a minimum of 2 oz copper thickness and a thermal relief pattern to prevent thermal stress.
  • To ensure reliable operation in high-temperature environments, ensure the device is operated within the recommended junction temperature range (TJ) of -55°C to 175°C. Implement proper thermal management, such as heat sinks or thermal interfaces, to maintain a safe operating temperature.
  • The SI7454DP-T1-E3 has an ESD rating of 2 kV human body model (HBM) and 250 V machine model (MM). Handle the device with ESD-protective equipment, such as wrist straps and mats, and follow proper handling procedures to prevent damage.
  • While the SI7454DP-T1-E3 is a high-performance device, it may not meet the specific requirements for high-reliability or aerospace applications. Consult with Vishay Intertechnologies or a qualified reliability engineer to determine the device's suitability for your specific application.
  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 30 seconds, and time above 183°C 90 seconds. For rework, use a low-temperature soldering iron (< 350°C) and avoid applying excessive heat or force to prevent damage.

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SI7454DP-T1-E3 Overview

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