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SI7818DN-T1-E3 - Vishay

Description: N-Channel MOSFET, 2.2 A, 150 V, 8-Pin PowerPAK 1212 Vishay SI7818DN-T1-E3

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SI7818DN-T1-E3 - Vishay - PCB symbol
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PCB Footprints
SI7818DN-T1-E3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2
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3D Models
SI7818DN-T1-E3 - Vishay - 3D model - Other - PowerPAK® 1212-8 Single_2
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SI7818DN-T1-E3 Details

  • Manufacturer Part Number:

    SI7818DN-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    4 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    2.2 A

  • Drain-source On Resistance-Max:

    0.135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.8 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI7818DN-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI7818DN-T1-E3 is a standard SOT23-5 package with a 1.3mm x 1.3mm body size. A minimum pad size of 0.6mm x 0.6mm is recommended for reliable soldering.
  • To ensure proper biasing, connect the VIN pin to a stable voltage source between 2.5V and 5.5V, and the EN pin to a logic-level signal (e.g., 0V or VIN) to enable or disable the device. Additionally, decouple the VIN pin with a 1μF ceramic capacitor to minimize noise and ripple.
  • The maximum allowed power dissipation for the SI7818DN-T1-E3 is 1.4W at an ambient temperature of 25°C. However, it's essential to consider the thermal resistance of the package (θJA = 125°C/W) and the PCB layout to ensure reliable operation.
  • The SI7818DN-T1-E3 is rated for operation up to 125°C. However, the device's performance and reliability may degrade at higher temperatures. It's essential to consider the application's temperature profile and potential thermal stress when designing with this device.
  • The SI7818DN-T1-E3 has built-in ESD protection, but it's still essential to follow proper ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure the workspace is ESD-safe to prevent damage to the device.

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SI7818DN-T1-E3 Overview

Use the download button to access the SI7818DN-T1-E3 schematic symbol, PCB footprint, and 3D model.
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