Part Image

SI8402DB-T1-E1 - Vishay

Description: 20 V N-Channel 1.8 V (G-S) MOSFET

Download SI8402DB-T1-E1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SI8402DB-T1-E1 - Vishay PCB footprint - Other - Other - SI8402DB-T1-E1-2
click to zoom
3D Models
SI8402DB-T1-E1 - Vishay  - 3D model - Other - SI8402DB-T1-E1-2
click to zoom

SI8402DB-T1-E1 Details

  • Manufacturer Part Number:

    SI8402DB-T1-E1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    2 X 2 MM, ROHS COMPLIANT, MICRO FOOT, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    5.3 A

  • Drain-source On Resistance-Max:

    0.043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PBGA-B4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    GRID ARRAY

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.77 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    BALL

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI8402DB-T1-E1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI8402DB-T1-E1 is a standard SOT23-6 package with a 1.8mm x 1.3mm body size. The datasheet provides a recommended land pattern and soldering guidelines.
  • To ensure reliability in high-temperature applications, follow the recommended operating conditions, derate the power dissipation according to the thermal derating curve, and ensure good thermal design and heat sinking on the PCB.
  • The maximum allowed voltage on the input pins of the SI8402DB-T1-E1 is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.
  • Yes, the SI8402DB-T1-E1 can be used in switching regulator applications. However, ensure that the device is properly bypassed and decoupled, and that the switching frequency is within the recommended range.
  • To calculate the power dissipation of the SI8402DB-T1-E1, use the equation Pd = (Vin - Vout) x Iout, where Vin is the input voltage, Vout is the output voltage, and Iout is the output current. Refer to the datasheet for thermal resistance and junction-to-ambient thermal resistance values.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SI8402DB-T1-E1 Overview

Use the download button to access the SI8402DB-T1-E1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SI840, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SI8402DB-T1-E1

Showing 0 results