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SI8481DB-T1-E1 - Vishay

Description: MOSFET -20V Vds 8V Vgs MICRO FOOT

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SI8481DB-T1-E1 - Vishay PCB footprint - Other - Other - MICRO FOOT
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SI8481DB-T1-E1 - Vishay  - 3D model - Other - MICRO FOOT
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SI8481DB-T1-E1 Details

  • Manufacturer Part Number:

    SI8481DB-T1-E1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    22 Weeks

  • Date Of Intro:

    2017-03-22

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PBGA-B4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    GRID ARRAY

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    BALL

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI8481DB-T1-E1 Frequently Asked Questions (FAQs)

  • For optimal performance, it is recommended to follow a 2-layer PCB layout with a solid ground plane on the bottom layer. Ensure a minimum of 10mm clearance around the device for heat dissipation. Use thermal vias to connect the thermal pad to the ground plane. A thermal interface material (TIM) with a thermal conductivity of 1-2 W/m-K is recommended.
  • Follow the recommended reflow profile with a peak temperature of 260°C for 20-30 seconds. Ensure the device is properly aligned and centered on the PCB. Use a solder paste with a melting point of 217°C to 220°C. Avoid excessive solder paste, as it can cause bridging or shorts.
  • For input capacitors, use X7R or X5R ceramic capacitors with a voltage rating of 10V to 25V and a capacitance value of 1uF to 10uF. For output capacitors, use X7R or X5R ceramic capacitors with a voltage rating of 10V to 25V and a capacitance value of 1uF to 22uF. Ensure the capacitors are placed close to the device and connected with short, low-impedance traces.
  • Use a oscilloscope to monitor the input and output waveforms. Check for proper power sequencing, voltage levels, and signal integrity. Verify the PCB layout and thermal management meet the recommended guidelines. Consult the datasheet and application notes for specific troubleshooting guidelines and debug techniques.
  • The SI8481DB-T1-E1 is rated for operation in the -40°C to 125°C temperature range. It is also rated for humidity up to 60% RH. Ensure the device is operated within the recommended voltage and current ratings. Consult the datasheet for specific environmental and operating conditions.

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SI8481DB-T1-E1 Overview

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