SI8800EDB-T2-E1 - Vishay

SI8800EDB-T2-E1 Details

• Manufacturer Part Number:

  SI8800EDB-T2-E1

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  0.80 X 0.80 MM, 0.35 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, ULTRA SMALL, MICRO FOOT, 4 PIN

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• Factory Lead Time:

  10 Weeks

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  5

• Configuration:

  SINGLE WITH BUILT-IN DIODE AND RESISTOR

• DS Breakdown Voltage-Min:

  20 V

• Drain Current-Max (ID):

  2 A

• Drain-source On Resistance-Max:

  0.105 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  S-PBGA-B4

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  4

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  GRID ARRAY

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  0.9 W

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn)

• Terminal Form:

  BALL

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON