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SI8802DB-T2-E1 - Vishay

Description: MOSFET 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 N-Channel 8 V (D-S) MOSFET

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SI8802DB-T2-E1 - Vishay - PCB symbol
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PCB Footprints
SI8802DB-T2-E1 - Vishay PCB footprint - Other - Other - SI8802DB-T2-E1-4
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SI8802DB-T2-E1 - Vishay - 3D model - Other - SI8802DB-T2-E1-4
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SI8802DB-T2-E1 Details

  • Manufacturer Part Number:

    SI8802DB-T2-E1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    0.80 X 0.80 MM, 0.40 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PBGA-B4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    GRID ARRAY

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.9 W

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    BALL

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SI8802DB-T2-E1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SI8802DB-T2-E1 is a 2x2mm QFN package with a 0.5mm pitch. A minimum of 2mm x 2mm pad size is recommended for reliable soldering.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within the recommended operating temperature range (-40°C to 125°C). Additionally, provide adequate thermal management, such as heat sinks or thermal pads, to prevent overheating.
  • The maximum allowable voltage on the input pins of the SI8802DB-T2-E1 is 5.5V. Exceeding this voltage may cause damage to the device.
  • Yes, the SI8802DB-T2-E1 is suitable for high-frequency applications up to 100 MHz. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation.
  • To handle ESD protection for the SI8802DB-T2-E1, ensure that the device is handled in an ESD-protected environment. Use ESD-protective packaging and handling equipment, and follow proper ESD-handling procedures during assembly and testing.

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SI8802DB-T2-E1 Overview

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