0.80 X 0.80 MM, 0.40 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICRO FOOT, 4 PIN
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
5
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
20 V
Drain-source On Resistance-Max:
0.1 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-PBGA-B4
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
4
Operating Mode:
ENHANCEMENT MODE
Package Body Material:
PLASTIC/EPOXY
Package Shape:
SQUARE
Package Style:
GRID ARRAY
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
P-CHANNEL
Surface Mount:
YES
Terminal Finish:
MATTE TIN
Terminal Form:
BALL
Terminal Position:
BOTTOM
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SI8817DB-T2-E1 Frequently Asked Questions (FAQs)
A recommended PCB layout for optimal thermal performance would be to have a solid ground plane on the bottom layer, and to use thermal vias to connect the thermal pad to the ground plane. This helps to dissipate heat efficiently.
To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, ensure good thermal design, and consider derating the device's power handling capabilities at elevated temperatures.
The SI8817DB-T2-E1 has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and handling to prevent damage. Additionally, consider adding external ESD protection devices if the device will be exposed to harsh environments.
The SI8817DB-T2-E1 is a commercial-grade device, but it can be used in high-reliability or automotive applications with proper qualification and testing. It's essential to consult with Vishay Intertechnologies and follow their guidelines for using commercial-grade devices in these applications.
When paralleling multiple SI8817DB-T2-E1 devices, ensure that each device has its own current sense resistor and that the devices are properly synchronized to prevent oscillations. Additionally, consider the thermal implications of paralleling devices and ensure proper heat sinking.
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SI8817DB-T2-E1 Overview
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