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SiA110DJ-T1-GE3 - Vishay

Description: SiA110DJ-T1-GE3 N-Channel MOSFET, 12 A, 100 V TrenchFET, 6-Pin SC-70 Vishay Siliconix

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SiA110DJ-T1-GE3 - Vishay - PCB symbol
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SiA110DJ-T1-GE3 - Vishay PCB footprint - Other - Other - SiA110DJ-T1-GE3-3
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SiA110DJ-T1-GE3 - Vishay - 3D model - Other - SiA110DJ-T1-GE3-3
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SiA110DJ-T1-GE3 Details

  • Manufacturer Part Number:

    SIA110DJ-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Date Of Intro:

    2018-01-28

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.75

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.072 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    19 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    40 ns

  • Turn-on Time-Max (ton):

    30 ns

SiA110DJ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIA110DJ-T1-GE3 is a rectangle with dimensions of 1.6 mm x 0.8 mm, with a pad size of 0.5 mm x 0.5 mm and a pitch of 0.65 mm.
  • To handle thermal management, ensure good airflow around the device, use a thermal pad or heat sink, and follow the recommended PCB layout guidelines. The device's thermal resistance (RthJA) is 125°C/W.
  • The maximum operating temperature range for the SIA110DJ-T1-GE3 is -55°C to 150°C, with a storage temperature range of -55°C to 175°C.
  • Yes, the SIA110DJ-T1-GE3 is qualified to AEC-Q101 and is suitable for high-reliability and automotive applications. However, it's essential to follow the recommended design and testing guidelines to ensure the device meets the specific application requirements.
  • To ensure proper soldering, follow the recommended soldering profile, use a solder with a melting point above 217°C, and avoid excessive soldering temperatures or times. The device is compatible with lead-free soldering processes.

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SiA110DJ-T1-GE3 Overview

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