HALOGEN FREE AND ROHS COMPLIANT, SC-70, LEADLESS, POWERPAK-6
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
0
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
8 V
Drain Current-Max (ID):
12 A
Drain-source On Resistance-Max:
0.011 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
S-XDSO-N3
JESD-609 Code:
e3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
SQUARE
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
19 W
Pulsed Drain Current-Max (IDM):
40 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
NO LEAD
Terminal Position:
DUAL
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SIA414DJ-T1-GE3 Frequently Asked Questions (FAQs)
The recommended storage condition for SIA414DJ-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
Yes, SIA414DJ-T1-GE3 is suitable for high-reliability applications due to its high-quality construction, rigorous testing, and compliance with industry standards such as AEC-Q101.
To prevent ESD damage, handle SIA414DJ-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, and follow proper handling and storage procedures.
The thermal resistance of SIA414DJ-T1-GE3 is typically around 10°C/W, but this value may vary depending on the specific application and operating conditions.
Yes, SIA414DJ-T1-GE3 is designed to operate in high-temperature environments, with a maximum junction temperature of 150°C, making it suitable for automotive and industrial applications.
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SIA414DJ-T1-GE3 Overview
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