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SIA416DJ-T1-GE3 - Vishay

Description: MOSFET 100V Vds 20V Vgs PowerPAK SC-70

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SIA416DJ-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SIA416DJ-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SC70-6L Single
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3D Models
SIA416DJ-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SC70-6L Single
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SIA416DJ-T1-GE3 Details

  • Manufacturer Part Number:

    SIA416DJ-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, SC-70, LEADLESS, POWERPAK-6

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    0.45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    11.3 A

  • Drain-source On Resistance-Max:

    0.083 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIA416DJ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIA416DJ-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
  • While SIA416DJ-T1-GE3 has a high-temperature rating, it's essential to derate the power according to the temperature coefficient to ensure reliable operation. Consult the datasheet for specific derating guidelines.
  • To prevent electrostatic discharge (ESD) damage, use an ESD wrist strap or mat, and ensure all equipment is properly grounded. Handle the component by the body, not the leads, and avoid touching the component pins.
  • The recommended soldering profile for SIA416DJ-T1-GE3 is a peak temperature of 260°C (500°F) for 10 seconds, with a ramp-up rate of 3°C/s (5.4°F/s) and a ramp-down rate of 6°C/s (10.8°F/s).
  • While SIA416DJ-T1-GE3 is designed to operate in a wide range of environments, it's essential to take precautions in humid environments. Consider using conformal coating or potting to protect the component from moisture.

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SIA416DJ-T1-GE3 Overview

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