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SIA427ADJ-T1-GE3 - Vishay

Description: VISHAY - SIA427ADJ-T1-GE3 - MOSFET Transistor, P Channel, -12 A, -8 V, 0.013 ohm, -4.5 V, -800 mV

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SIA427ADJ-T1-GE3 - Vishay PCB footprint - Other - Other - SIA427ADJ-T1-GE3-2
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SIA427ADJ-T1-GE3 Details

  • Manufacturer Part Number:

    SIA427ADJ-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-70, 6 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    690 pF

  • JESD-30 Code:

    S-PDSO-N3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    3.5 W

  • Power Dissipation-Max (Abs):

    19 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    165 ns

  • Turn-on Time-Max (ton):

    60 ns

SIA427ADJ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIA427ADJ-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
  • While SIA427ADJ-T1-GE3 has a high operating temperature range, it's essential to consider the derating curve and thermal management to ensure reliable operation. Consult with a thermal expert or Vishay's application engineers for guidance.
  • To prevent electrostatic discharge (ESD) damage, handle SIA427ADJ-T1-GE3 components in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.
  • The recommended soldering profile for SIA427ADJ-T1-GE3 is a peak temperature of 260°C (500°F) for 10 seconds, with a ramp-up rate of 3°C/s (5.4°F/s) and a ramp-down rate of 6°C/s (10.8°F/s).
  • While SIA427ADJ-T1-GE3 is a high-reliability component, it's essential to consult with Vishay's automotive experts to ensure the component meets the specific requirements of your automotive application.

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SIA427ADJ-T1-GE3 Overview

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