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SIA427DJ-T1-GE3 - Vishay

Description: VISHAY - SIA427DJ-T1-GE3 - MOSFET, P CH, -8V, -12A, POWERPAK SC70

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PCB Footprints
SIA427DJ-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SC-70-6L Single_1
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3D Models
SIA427DJ-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SC-70-6L Single_1
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SIA427DJ-T1-GE3 Details

  • Manufacturer Part Number:

    SIA427DJ-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    8 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    690 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    19 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    165 ns

  • Turn-on Time-Max (ton):

    60 ns

SIA427DJ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIA427DJ-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
  • To prevent electrostatic discharge (ESD) damage, handle SIA427DJ-T1-GE3 with an anti-static wrist strap, mat, or workstation, and ensure all equipment is grounded.
  • The maximum power dissipation for SIA427DJ-T1-GE3 is 1.5 W, and it's essential to ensure proper thermal management to prevent overheating.
  • Yes, SIA427DJ-T1-GE3 is suitable for high-reliability applications, such as aerospace, defense, and medical devices, due to its high-quality manufacturing process and rigorous testing.
  • To solder SIA427DJ-T1-GE3, use a soldering iron with a temperature range of 250°C to 260°C, and ensure the soldering time is less than 3 seconds to prevent thermal damage.

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SIA427DJ-T1-GE3 Overview

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Part Image SIA427DJ-T1-GE3 Vishay Siliconix

Power Field-Effect Transistor, 12A I(D), 8V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET