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SIA519EDJ-T1-GE3 - Vishay

Description: MOSFET -20V Vds 12V Vgs PowerPAK SC-70

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SIA519EDJ-T1-GE3 - Vishay PCB footprint - Other - Other - SIA519EDJ-T1-GE3-4
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SIA519EDJ-T1-GE3 - Vishay  - 3D model - Other - SIA519EDJ-T1-GE3-4
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SIA519EDJ-T1-GE3 Details

  • Manufacturer Part Number:

    SIA519EDJ-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SC-70, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    S-PDSO-N6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    7.8 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60 ns

  • Turn-on Time-Max (ton):

    35 ns

SIA519EDJ-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIA519EDJ-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • Yes, SIA519EDJ-T1-GE3 is a high-reliability device, suitable for use in high-reliability applications, such as aerospace, defense, and medical devices, due to its robust design and rigorous testing.
  • To prevent electrostatic discharge (ESD) damage, handle SIA519EDJ-T1-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, and follow proper ESD handling procedures.
  • The thermal resistance of SIA519EDJ-T1-GE3 is typically around 10°C/W, but this value may vary depending on the specific application and operating conditions.
  • Yes, SIA519EDJ-T1-GE3 is designed to operate in high-temperature environments, with a maximum junction temperature of 150°C, making it suitable for use in automotive, industrial, and other high-temperature applications.

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SIA519EDJ-T1-GE3 Overview

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