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SIE810DF-T1-E3 - Vishay

Description: MOSFET 20V 60A 125W 1.4mohm @ 10V

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PCB Footprints
SIE810DF-T1-E3 - Vishay PCB footprint - Other - Other - SIE810DF-T1-E3-4
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3D Models
SIE810DF-T1-E3 - Vishay  - 3D model - Other - SIE810DF-T1-E3-4
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SIE810DF-T1-E3 Details

  • Manufacturer Part Number:

    SIE810DF-T1-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, LEADLESS, POLARPAK-10

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.0027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-N4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIE810DF-T1-E3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIE810DF-T1-E3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • Handle the SIE810DF-T1-E3 with an anti-static wrist strap, mat, or other ESD protection devices. Avoid touching the component's pins or leads, and use ESD-safe packaging and storage materials.
  • The maximum allowable power dissipation for the SIE810DF-T1-E3 is 1.5 W at an ambient temperature of 25°C. However, this value may vary depending on the specific application and operating conditions.
  • The SIE810DF-T1-E3 is a commercial-grade component, and its use in high-reliability or safety-critical applications may require additional testing, validation, and certification. Consult with Vishay Intertechnologies or a qualified engineer to determine the component's suitability for such applications.
  • The typical lead time for SIE810DF-T1-E3 production and delivery varies depending on the quantity, region, and availability. Contact Vishay Intertechnologies or an authorized distributor for the most up-to-date lead time information.

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SIE810DF-T1-E3 Overview

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