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SIHB10N40D-GE3 - Vishay

Description: MOSFET N-CH 400V 10A DPAK

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SIHB10N40D-GE3 - Vishay  - 3D model
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SIHB10N40D-GE3 Details

  • Manufacturer Part Number:

    SIHB10N40D-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    194 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    23 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHB10N40D-GE3 Frequently Asked Questions (FAQs)

  • The recommended gate resistor value for SIHB10N40D-GE3 is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency.
  • To ensure safe operation during parallel operation, it's essential to ensure that the devices are matched in terms of threshold voltage, transconductance, and switching characteristics. Additionally, a common gate drive and a shared heat sink can help to minimize differences between devices.
  • The maximum allowed junction temperature for SIHB10N40D-GE3 is 150°C, as specified in the datasheet. Exceeding this temperature can lead to reduced performance, reliability, and lifespan.
  • Yes, SIHB10N40D-GE3 can be used in resonant converter topologies, but it's essential to ensure that the device is operated within its safe operating area (SOA) and that the resonant frequency is within the device's specified frequency range.
  • A good PCB layout for SIHB10N40D-GE3 should minimize parasitic inductance and ensure good thermal conductivity. A heat sink with a thermal resistance of less than 1°C/W is recommended, and the device should be mounted using a suitable thermal interface material.

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SIHB10N40D-GE3 Overview

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