SIHB12N60E-GE3 - Vishay

SIHB12N60E-GE3 Details

• Manufacturer Part Number:

  SIHB12N60E-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  TO-263, D2PAK-3/2

• ECCN Code:

  EAR99

• Factory Lead Time:

  20 Weeks

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  6

• Avalanche Energy Rating (Eas):

  117 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  600 V

• Drain Current-Max (ID):

  12 A

• Drain-source On Resistance-Max:

  0.38 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  5 pF

• JEDEC-95 Code:

  TO-263AB

• JESD-30 Code:

  R-PSSO-G2

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  147 W

• Pulsed Drain Current-Max (IDM):

  27 A

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  108 ns

• Turn-on Time-Max (ton):

  66 ns