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SIHB17N80AE-GE3 - Vishay

Description: MOSFET 800V N-CHANNEL

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SIHB17N80AE-GE3 - Vishay - PCB symbol
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PCB Footprints
SIHB17N80AE-GE3 - Vishay PCB footprint - Other - Other - D2PAK (TO-263)_Thickness=4.83mm_1
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SIHB17N80AE-GE3 Details

  • Manufacturer Part Number:

    SIHB17N80AE-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, D2AK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Date Of Intro:

    2020-07-06

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.7

  • Avalanche Energy Rating (Eas):

    127 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.29 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    179 W

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    152 ns

  • Turn-on Time-Max (ton):

    88 ns

SIHB17N80AE-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIHB17N80AE-GE3 is a TO-247-3L package with a minimum pad size of 12.5mm x 10.5mm and a thermal pad size of 6.5mm x 6.5mm.
  • To ensure reliable operation of SIHB17N80AE-GE3 in high-temperature environments, it is recommended to follow proper thermal management practices, such as using a heat sink with a thermal interface material, and ensuring good airflow around the device.
  • The maximum allowed voltage derating for SIHB17N80AE-GE3 is 80% of the maximum rated voltage, which is 800V. Therefore, the maximum allowed voltage derating is 640V.
  • Yes, SIHB17N80AE-GE3 can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce reliability.
  • The recommended gate drive voltage for SIHB17N80AE-GE3 is between 10V and 15V, with a maximum gate drive current of 5A.

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SIHB17N80AE-GE3 Overview

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