SIHB22N60EF-GE3 footprint, schematic symbol and 3D model by Vishay

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SIHB22N60EF-GE3 - Vishay PCB footprint - Other - Other - SIHB22N60EF-GE3-2

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Part Number SIHB22N60EF-GE3
Manufacturer Vishay
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - SIHB22N60EF-GE3-2
Released Date Nov 6, 2019
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SIHB22N60EF-GE3 Details

Manufacturer Part Number:
SIHB22N60EF-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
D2PAK-3/2
ECCN Code:
EAR99
Factory Lead Time:
20 Weeks
Date Of Intro:
2019-02-07
Manufacturer:
Vishay Intertechnologies
YTEOL:
6
Additional Feature:
AVALANCHE RATED
Avalanche Energy Rating (Eas):
144 mJ
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
600 V
Drain Current-Max (ID):
19 A
Drain-source On Resistance-Max:
0.182 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
5 pF
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
179 W
Pulsed Drain Current-Max (IDM):
46 A
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
137 ns
Turn-on Time-Max (ton):
72 ns

SIHB22N60EF-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for SIHB22N60EF-GE3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
To ensure reliable operation in high-temperature environments, it is recommended to derate the maximum junction temperature (Tj) by 1°C per 1000 feet of altitude, and to use a suitable heat sink with a thermal resistance of less than 1°C/W.
The maximum allowed voltage transient for SIHB22N60EF-GE3 is 600V, with a maximum duration of 100ms. Exceeding this limit may cause damage to the device.
Yes, SIHB22N60EF-GE3 can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are matched in terms of threshold voltage and on-resistance to minimize current imbalance and reduce the risk of thermal runaway.
The recommended gate drive voltage for SIHB22N60EF-GE3 is between 10V and 15V, with a maximum gate current of 10mA. Exceeding this limit may cause damage to the device.

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