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SIHB24N65EFT1-GE3 - Vishay

Description: Transistor MOSFET N-CH 650V 24A 3-Pin D2PAK.

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SIHB24N65EFT1-GE3 Details

  • Manufacturer Part Number:

    SIHB24N65EFT1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, D2PAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Date Of Intro:

    2017-11-21

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.7

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    691 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.156 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    65 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    212 ns

  • Turn-on Time-Max (ton):

    116 ns

SIHB24N65EFT1-GE3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for SIHB24N65EFT1-GE3 is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure the MOSFET is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate driver or a voltage buffer can be used to provide a high current pulse to the gate.
  • A good PCB layout for SIHB24N65EFT1-GE3 should minimize the parasitic inductance and resistance of the PCB traces. This can be achieved by using wide, short traces for the drain and source connections, and placing the gate driver or voltage buffer close to the MOSFET. Additionally, a solid ground plane and a decoupling capacitor near the MOSFET can help reduce noise and ringing.
  • Yes, SIHB24N65EFT1-GE3 is suitable for high-frequency switching applications up to several hundred kHz. However, the user should ensure that the MOSFET is properly driven, and the PCB layout is optimized to minimize parasitic inductance and capacitance. Additionally, the user should consider the MOSFET's switching losses, gate charge, and output capacitance when designing the application.
  • To protect the MOSFET from overvoltage and overcurrent, a voltage clamp or a zener diode can be used to limit the voltage across the MOSFET. Additionally, a current sense resistor and a fuse can be used to detect and limit the current through the MOSFET. A thermal protection circuit can also be implemented to detect overheating and shut down the device if necessary.

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SIHB24N65EFT1-GE3 Overview

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