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SIHB24N80AE-GE3 - Vishay

Description: MOSFET N-CHANNEL 800V E Series Pwr MOSFET

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SIHB24N80AE-GE3 - Vishay - PCB symbol
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PCB Footprints
SIHB24N80AE-GE3 - Vishay PCB footprint - Other - Other - D2PAK(TO-263)_2023
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3D Models
SIHB24N80AE-GE3 - Vishay - 3D model - Other - D2PAK(TO-263)_2023
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SIHB24N80AE-GE3 Details

  • Manufacturer Part Number:

    SIHB24N80AE-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263, D2PAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Additional Feature:

    AVALANCHE ENERGY RATED

  • Avalanche Energy Rating (Eas):

    127 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.184 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Pulsed Drain Current-Max (IDM):

    51 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    160 ns

  • Turn-on Time-Max (ton):

    130 ns

SIHB24N80AE-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the SIHB24N80AE-GE3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide adequate heat sinking, such as a heat sink or a cold plate, and ensure good thermal interface material (TIM) between the device and the heat sink. Additionally, ensure good airflow around the device and avoid blocking the airflow.
  • The recommended gate resistance for the SIHB24N80AE-GE3 is between 10 ohms and 20 ohms. This value helps to prevent oscillations and ensures stable operation of the device.
  • Yes, the SIHB24N80AE-GE3 can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of their electrical characteristics, and the gate drive circuits are properly synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the SIHB24N80AE-GE3 is 1200 V, as specified in the datasheet. Exceeding this value may damage the device.

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SIHB24N80AE-GE3 Overview

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