HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3/2
ECCN Code:
EAR99
Factory Lead Time:
20 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
6.6
Avalanche Energy Rating (Eas):
88 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
620 V
Drain Current-Max (ID):
6 A
Drain-source On Resistance-Max:
0.9 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-252AA
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
78 W
Pulsed Drain Current-Max (IDM):
12 A
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SiHD6N62E-GE3 Frequently Asked Questions (FAQs)
The recommended gate resistor value for SIHD6N62E-GE3 is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency. However, it's recommended to consult the application note or contact Vishay's technical support for more specific guidance.
While the SIHD6N62E-GE3 has a maximum junction temperature rating of 150°C, it's essential to consider the thermal management and heat dissipation in the system design. Ensure that the IGBT is properly cooled, and the system is designed to operate within the recommended temperature range to prevent thermal runaway and ensure reliability.
To ensure proper driving and control of the SIHD6N62E-GE3, it's crucial to use a suitable gate driver IC that can provide the required gate voltage and current. Additionally, consider the gate resistance, gate capacitance, and switching frequency to prevent oscillations and ensure stable operation.
For optimal performance and thermal management, it's recommended to follow Vishay's guidelines for PCB layout and thermal design. This includes using a thermal pad, ensuring proper heat sink attachment, and minimizing thermal resistance. Consult the application note or Vishay's technical support for more specific guidance.
Yes, the SIHD6N62E-GE3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the IGBTs are properly matched, and the system is designed to handle the increased current and thermal requirements. Consult Vishay's application note or technical support for more specific guidance on parallel operation.
Trust Checks
This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored
SiHD6N62E-GE3 Overview
Use the download button to access the SiHD6N62E-GE3 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like SiHD6,
or try a keyword search, such as Power Field-Effect Transistors
