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SiHD6N65E-GE3 - Vishay

Description: VISHAY - SIHD6N65E-GE3 - MOSFET, N-CH, 650V, 7A, TO-252

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SiHD6N65E-GE3 - Vishay PCB footprint - Other - Other - D-PAK ( TO-252AA)
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SiHD6N65E-GE3 Details

  • Manufacturer Part Number:

    SIHD6N65E-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.6

  • Avalanche Energy Rating (Eas):

    56 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SiHD6N65E-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SIHD6N65E-GE3 is -55°C to 175°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated at extreme temperatures for extended periods.
  • To ensure the SOA is not exceeded, you should consider the device's voltage, current, and temperature ratings. The datasheet provides SOA curves that help you determine the maximum allowable voltage and current combinations. Additionally, you should consider the application's specific requirements and potential fault conditions.
  • The recommended gate drive voltage for the SIHD6N65E-GE3 is typically between 10V to 15V, depending on the specific application and required switching speed. However, it's essential to ensure the gate drive voltage does not exceed the maximum rated gate-source voltage (VGS) of ±20V.
  • To minimize the effects of parasitic inductance and capacitance, you should use a layout that minimizes lead lengths and uses a ground plane to reduce inductance. Additionally, consider using a MOSFET with a low parasitic inductance and capacitance, such as the SIHD6N65E-GE3, which has a optimized package design for high-frequency applications.
  • Thermal management is critical for the SIHD6N65E-GE3, as excessive junction temperatures can reduce the device's lifespan and performance. Ensure good heat sinking, use a thermal interface material (TIM) if necessary, and consider the device's thermal resistance (RθJA) when designing the system's thermal management strategy.

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