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SIHFL014TR-GE3 - Vishay

Description: MOSFET N-CHANNEL 60V

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SIHFL014TR-GE3 - Vishay - PCB symbol
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PCB Footprints
SIHFL014TR-GE3 - Vishay PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 (HIGH VOLTAGE)
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3D Models
SIHFL014TR-GE3 - Vishay - 3D model - SOT223 (3-Pin) - SOT-223 (HIGH VOLTAGE)
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SIHFL014TR-GE3 Details

  • Manufacturer Part Number:

    SIHFL014TR-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29 pF

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHFL014TR-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIHFL014TR-GE3 is a rectangular pad with a size of 1.5 mm x 0.8 mm, with a 0.3 mm x 0.3 mm thermal pad in the center. The pad should be solder-mask defined and have a non-solder-mask-defined area of 0.5 mm x 0.5 mm around the thermal pad.
  • To ensure reliable soldering of SIHFL014TR-GE3, use a soldering iron with a temperature of 250°C to 260°C, and a solder with a melting point of 217°C to 221°C. Apply a small amount of solder paste to the PCB pad, and use a reflow oven with a peak temperature of 240°C to 250°C. Avoid using excessive solder or flux, and ensure the component is properly aligned during the soldering process.
  • The maximum operating temperature range for SIHFL014TR-GE3 is -55°C to 150°C. However, the device's performance and reliability may degrade if operated at temperatures above 125°C for extended periods.
  • Yes, SIHFL014TR-GE3 is designed to withstand high-vibration environments. However, it's essential to ensure the component is properly secured to the PCB using a suitable adhesive or mechanical fastening method to prevent damage or detachment during vibration.
  • To handle ESD protection for SIHFL014TR-GE3, use an ESD wrist strap or mat during handling and assembly. Ensure the PCB and component are properly grounded, and use ESD-sensitive packaging materials during storage and transportation.

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SIHFL014TR-GE3 Overview

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SIHFL014TR-GE3 Alternates

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Image Part Number Model
Part Image SIHFL014TR-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Part Image IRFL014TRPBF Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Part Image IRFL014PBF Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Part Image IRFL014TR Vishay Intertechnologies

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Part Image IRFL014 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
For a full list of alternate parts for SIHFL014TR-GE3, check out Findchips.com