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SIHFL110TR-GE3 - Vishay

Description: MOSFET 100V Vds 20V Vgs SOT-223

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SIHFL110TR-GE3 - Vishay - PCB symbol
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PCB Footprints
SIHFL110TR-GE3 - Vishay PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223
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3D Models
SIHFL110TR-GE3 - Vishay - 3D model - SOT223 (3-Pin) - SOT-223
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SIHFL110TR-GE3 Details

  • Manufacturer Part Number:

    SIHFL110TR-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 4 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHFL110TR-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIHFL110TR-GE3 is a pad size of 2.5 mm x 1.5 mm with a 0.5 mm spacing between pads. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • To ensure the reliability of SIHFL110TR-GE3 in high-temperature applications, it's crucial to follow the recommended derating curves, ensure proper thermal management, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum allowed voltage for SIHFL110TR-GE3 is 100 V. Exceeding this voltage can cause permanent damage to the device. It's essential to ensure that the voltage rating is not exceeded during operation, including during startup and shutdown sequences.
  • To calculate the power dissipation of SIHFL110TR-GE3, use the following formula: Pd = (Vds x Ids) + (Vgs x Igs), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current. Ensure that the calculated power dissipation does not exceed the maximum allowed value specified in the datasheet.
  • The recommended storage condition for SIHFL110TR-GE3 is in a dry, cool place with a temperature range of -40°C to 30°C and relative humidity below 60%. Avoid exposing the devices to direct sunlight, moisture, or extreme temperatures during storage.

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SIHFL110TR-GE3 Overview

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