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SIS443DN-T1-GE3 - Vishay

Description: MOSFET -40V .0117Ohm@10V 35A P-Ch G-III

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SIS443DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SIS443DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2_2021
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3D Models
SIS443DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8 Single_2_2021
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SIS443DN-T1-GE3 Details

  • Manufacturer Part Number:

    SIS443DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.07

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    0.035 A

  • Drain-source On Resistance-Max:

    0.0117 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIS443DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIS443DN-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • Handle the SIS443DN-T1-GE3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the component's pins or leads, and use ESD-safe tools and equipment.
  • The maximum allowable power dissipation for SIS443DN-T1-GE3 is 1.5 W, and it's essential to ensure the component is properly heat-sinked to prevent overheating.
  • While the SIS443DN-T1-GE3 is a high-quality component, it's essential to consult with Vishay Intertechnologies or a qualified representative to determine its suitability for high-reliability or aerospace applications, as additional testing and certification may be required.
  • The recommended soldering profile for SIS443DN-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds, and a preheat temperature of 150-200°C. Ensure the soldering process is in accordance with the IPC-J-STD-020 standard.

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SIS443DN-T1-GE3 Overview

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