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SISH112DN-T1-GE3 - Vishay

Description: MOSFET 30V Vds 12V Vgs PowerPAK 1212-8

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SISH112DN-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SISH112DN-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 1212-8 Single_2
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3D Models
SISH112DN-T1-GE3 - Vishay - 3D model - Other - PowerPAK® 1212-8 Single_2
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SISH112DN-T1-GE3 Details

  • Manufacturer Part Number:

    SISH112DN-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2018-08-28

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7.2

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11.3 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SISH112DN-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SISH112DN-T1-GE3 is a standard SMD (Surface Mount Device) footprint with a 1.6 mm x 1.6 mm pad size and a 0.5 mm x 0.5 mm thermal pad.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a soldering flux to the pads. Also, ensure the PCB is clean and free of oxidation.
  • The maximum operating temperature range for the SISH112DN-T1-GE3 is -55°C to 175°C, with a storage temperature range of -55°C to 200°C.
  • Yes, the SISH112DN-T1-GE3 is designed to operate in humid environments, but it's recommended to follow proper PCB design and assembly guidelines to prevent moisture-related issues.
  • Handle the SISH112DN-T1-GE3 with ESD-protective equipment, such as wrist straps or mats, and ensure the PCB design includes ESD protection components, like TVS diodes or resistors, to prevent damage from electrostatic discharge.

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SISH112DN-T1-GE3 Overview

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