- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for SiSS52DN-T1-GE3
- Part Number SiSS52DN-T1-GE3
- Manufacturer Vishay
- Pin Count 11
- Part Category MOSFET (N-Channel)
- Package Category Other
- Footprint Name Other - PowerPAK® 1212-8 S
- Released Date May 24, 2021
- Last Modified Date Apr 29, 2025 9:46 AM UTC
- Pinout / Pin List Click Here (Member Only)
SiSS52DN-T1-GE3 Details
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Manufacturer Part Number:
SISS52DN-T1-GE3
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Factory Lead Time:
12 Weeks
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Date Of Intro:
2020-06-21
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
5.3
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Avalanche Energy Rating (Eas):
45 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
SiSS52DN-T1-GE3 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the SISS52DN-T1-GE3 is a pad layout with a minimum size of 1.3 mm x 0.8 mm, with a 0.5 mm spacing between pads. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal runaway.
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To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating curves, ensure proper thermal management, and avoid exceeding the maximum junction temperature (Tj) of 175°C. Additionally, consider using a thermally conductive interface material and a heat sink to dissipate heat efficiently.
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The maximum surge current rating for the SISS52DN-T1-GE3 is 100 A for 10 ms, as specified in the datasheet. However, it's essential to note that the device can handle higher surge currents for shorter durations, but this should be carefully evaluated based on the specific application requirements.
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Yes, the SISS52DN-T1-GE3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal mismatch between the devices.
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The recommended storage temperature range for the SISS52DN-T1-GE3 is -40°C to 125°C. It's essential to store the devices in a dry, cool place, away from direct sunlight and moisture, to prevent damage and ensure long-term reliability.
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SiSS52DN-T1-GE3 Overview
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