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SKM1400GB12P4 - Semikron

Description: POWER IGBT TRANSISTOR

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SKM1400GB12P4 - Semikron  - 3D model
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SKM1400GB12P4 Details

  • Manufacturer Part Number:

    SKM1400GB12P4

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2016-12-21

  • Manufacturer:

    SEMIKRON

  • YTEOL:

    5.35

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    2165 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PUFM-X12

  • Number of Elements:

    2

  • Number of Terminals:

    12

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    974 ns

  • Turn-on Time-Nom (ton):

    472 ns

  • VCEsat-Max:

    2.07 V

SKM1400GB12P4 Frequently Asked Questions (FAQs)

  • The maximum allowed junction temperature for the SKM1400GB12P4 is 150°C, as specified in the datasheet. However, it's recommended to operate the module at a maximum junction temperature of 125°C to ensure reliable operation and extend its lifespan.
  • Proper thermal management is crucial for the SKM1400GB12P4. Ensure good thermal contact between the module and the heat sink, use a suitable thermal interface material, and maintain a clean and dry environment. The heat sink should be designed to dissipate the maximum power loss of the module, which is around 2.5 kW.
  • The recommended gate resistor value for the SKM1400GB12P4 is between 10 Ω and 20 Ω. This value helps to limit the gate current and prevent oscillations. However, the optimal gate resistor value may vary depending on the specific application and circuit design.
  • Yes, the SKM1400GB12P4 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing. Additionally, the thermal management system should be designed to handle the increased power loss.
  • The maximum allowed dv/dt for the SKM1400GB12P4 is 10 kV/μs. Exceeding this value can lead to premature aging or failure of the module. It's essential to ensure that the circuit design and layout are optimized to minimize the voltage slew rate.

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SKM1400GB12P4 Overview

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