SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max:
20 V
JESD-30 Code:
R-XUFM-X7
Number of Elements:
2
Number of Terminals:
7
Operating Temperature-Max:
175 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Qualification Status:
Not Qualified
Reference Standard:
UL RECOGNIZED
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
UPPER
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
POWER CONTROL
Transistor Element Material:
SILICON
VCEsat-Max:
2.05 V
SKM150GB12T4 Frequently Asked Questions (FAQs)
The maximum allowed overcurrent for the SKM150GB12T4 is 2.5 times the nominal current rating for a maximum of 10ms, according to SEMIKRON's application notes.
Proper thermal management for the SKM150GB12T4 involves ensuring good heat sink contact, using a thermal interface material, and maintaining a maximum junction temperature of 150°C. A heat sink with a thermal resistance of 0.5 K/W or lower is recommended.
The recommended gate resistor value for the SKM150GB12T4 is between 10 ohms and 20 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
Yes, the SKM150GB12T4 can be used in parallel for higher current applications, but it requires careful consideration of the current sharing and thermal management. SEMIKRON recommends using a master-slave configuration with a current sense resistor to ensure balanced current sharing.
The maximum allowed voltage transient for the SKM150GB12T4 is 120% of the nominal voltage rating for a maximum of 10ms, according to SEMIKRON's application notes.
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SKM150GB12T4 Overview
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