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SMMUN2113LT1G - onsemi

Description: Simplifies Circuit Design; Reduces Board Space; Reduces Component Count; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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Symbol
SMMUN2113LT1G - onsemi - PCB symbol
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PCB Footprints
SMMUN2113LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - sot-23/1
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3D Models
SMMUN2113LT1G - onsemi - 3D model - SOT23 (3-Pin) - sot-23/1
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SMMUN2113LT1G Details

  • Manufacturer Part Number:

    SMMUN2113LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Additional Feature:

    BUILT IN BIAS RESISTANCE RATIO IS 1

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE WITH BUILT-IN RESISTOR

  • DC Current Gain-Min (hFE):

    80

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.4 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    0.25 V

SMMUN2113LT1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the package to connect the thermal pad to the copper area.
  • The device requires a stable voltage supply and a proper biasing circuit to ensure optimal performance. A voltage regulator or a low-dropout regulator (LDO) should be used to regulate the voltage supply. The biasing circuit should be designed to provide a stable voltage and current to the device.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Handling the device requires proper ESD protection, such as wearing an ESD strap or using an ESD mat. Additionally, the device should be handled by the package body and not by the leads to prevent mechanical stress.
  • The optimal operating frequency depends on the specific application and the required performance. The device datasheet provides a recommended operating frequency range. However, the optimal frequency may vary depending on the specific use case. It is recommended to perform simulations and testing to determine the optimal frequency for the specific application.
  • The SMMUN2113LT1G meets the reliability and quality standards of the automotive industry, including AEC-Q101 and ISO/TS 16949. The device is also manufactured in accordance with onsemi's quality and reliability standards.

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SMMUN2113LT1G Overview

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