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SPD04N50C3 - Infineon

Description: Infineon SPD04N50C3 N-channel MOSFET Transistor, 4.5 A, 560 V, 3-Pin TO-252

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SPD04N50C3 - Infineon PCB footprint - Other - Other - SPD04N50C3-3
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SPD04N50C3 Details

  • Manufacturer Part Number:

    SPD04N50C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-252

  • Package Description:

    DPAK-3/2

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    0.95 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    13.5 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

SPD04N50C3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SPD04N50C3 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power loss of the device, which is approximately 150W. Additionally, ensure good airflow around the heat sink to prevent overheating.
  • For optimal performance and to minimize electromagnetic interference (EMI), it's recommended to follow a 4-layer PCB layout with a dedicated ground plane and a separate power plane. Keep the high-frequency signals away from the power and ground planes, and use a Kelvin connection for the gate driver to minimize parasitic inductance.
  • To protect the SPD04N50C3 from overvoltage and overcurrent, it's recommended to use a voltage regulator or a DC-DC converter with overvoltage protection (OVP) and overcurrent protection (OCP) features. Additionally, consider using a fuse or a current-limiting resistor in series with the device to prevent excessive current flow.
  • The recommended gate drive voltage for the SPD04N50C3 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but it may also increase power losses and reduce device reliability.

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