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SQ2309ES-T1_GE3 - Vishay

Description: MOSFET 60V -1.7A 2W AEC-Q101 Qualified

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PCB Footprints
SQ2309ES-T1_GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)
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3D Models
SQ2309ES-T1_GE3 - Vishay  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)
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SQ2309ES-T1_GE3 Details

  • Manufacturer Part Number:

    SQ2309ES-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    2.3 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    1.7 A

  • Drain-source On Resistance-Max:

    0.335 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    30 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    6.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    32 ns

  • Turn-on Time-Max (ton):

    22 ns

SQ2309ES-T1_GE3 Frequently Asked Questions (FAQs)

  • Store the components in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C.
  • Yes, the SQ2309ES-T1_GE3 is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high self-resonant frequency.
  • Handle the components by the body, avoiding touching the leads or the ceramic capacitor's electrodes to prevent electrostatic discharge (ESD) damage.
  • The maximum voltage derating for SQ2309ES-T1_GE3 is 80% of the rated voltage to ensure reliable operation and prevent premature failure.
  • Yes, the SQ2309ES-T1_GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.

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SQ2309ES-T1_GE3 Overview

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