Description:TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
The recommended PCB footprint for SQ2318CES-T1_GE3 is a rectangular pad with a size of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
The maximum allowed voltage derating for SQ2318CES-T1_GE3 is 80% of the rated voltage, which is 18 V. Therefore, the maximum allowed voltage is 14.4 V.
Yes, SQ2318CES-T1_GE3 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic inductance and capacitance, as well as the PCB layout, to minimize high-frequency losses.
To ensure reliability in a humid environment, consider using a conformal coating or potting compound to protect the device from moisture. Also, ensure that the PCB is designed with a moisture-resistant material and that the device is stored in a dry environment before assembly.
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SQ2318CES-T1_GE3 Overview
Use the download button to access the SQ2318CES-T1_GE3 schematic symbol, PCB footprint, and 3D model.
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