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SQ2362CES-T1_GE3 - Vishay

Description: Power MOSFET, N Channel, 60 V, 4.3 A, 0.068 ohm, SOT-23, Surface Mount , 3W , -55°C to +175°C

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Symbol
SQ2362CES-T1_GE3 - Vishay - PCB symbol
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PCB Footprints
SQ2362CES-T1_GE3 - Vishay PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)_2024-2
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3D Models
SQ2362CES-T1_GE3 - Vishay - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)_2024-2
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SQ2362CES-T1_GE3 Details

  • Manufacturer Part Number:

    SQ2362CES-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-236, SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    7 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.068 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    26 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3 W

  • Pulsed Drain Current-Max (IDM):

    17 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    51 ns

  • Turn-on Time-Max (ton):

    40 ns

SQ2362CES-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQ2362CES-T1_GE3 is a rectangle with dimensions 2.5 mm x 1.3 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • While the SQ2362CES-T1_GE3 is rated for operation up to 150°C, it's essential to consider the derating curves and thermal management to ensure reliable operation in high-temperature environments.
  • To prevent ESD damage, handle the SQ2362CES-T1_GE3 with ESD-protective equipment, wear an ESD strap, and ensure the assembly process is ESD-controlled.
  • A recommended soldering profile for SQ2362CES-T1_GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds, and a ramp-up rate of 3°C/s.
  • While the SQ2362CES-T1_GE3 is not hermetically sealed, it's designed to withstand normal humidity levels. However, it's essential to consider moisture-sensitive precautions and conformal coating for harsh environments.

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SQ2362CES-T1_GE3 Overview

Use the download button to access the SQ2362CES-T1_GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SQ236, or try a keyword search, such as Power Field-Effect Transistors

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