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SQ4435EY-T1_BE3 - Vishay

Description: MOSFET P-CHANNEL 30 V

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SQ4435EY-T1_BE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SO8
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SQ4435EY-T1_BE3 - Vishay  - 3D model - Small Outline Packages - SO8
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SQ4435EY-T1_BE3 Details

  • Manufacturer Part Number:

    SQ4435EY-T1_BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    31 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    335 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    83 ns

  • Turn-on Time-Max (ton):

    34 ns

SQ4435EY-T1_BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQ4435EY-T1_BE3 is a rectangle with dimensions 2.5 mm x 1.3 mm, with a 0.5 mm radius corner and a 0.3 mm pad spacing. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal runaway.
  • To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating curves, keep the junction temperature below 150°C, and ensure proper thermal management, such as using a heat sink or thermal interface material. Additionally, consider using a thermally conductive PCB material and optimizing the PCB design for thermal performance.
  • The maximum allowed voltage for SQ4435EY-T1_BE3 is 35 V, which is the maximum repetitive reverse voltage rating. Exceeding this voltage can lead to device failure or reduced lifespan.
  • Yes, SQ4435EY-T1_BE3 can be used in switching applications, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and ensure that the switching frequency is within the recommended range. Additionally, consider the impact of switching losses on the device's thermal performance.
  • To handle ESD protection for SQ4435EY-T1_BE3, follow proper handling and storage procedures, use ESD-protective packaging and materials, and consider adding external ESD protection devices, such as TVS diodes or ESD arrays, to the circuit design.

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SQ4435EY-T1_BE3 Overview

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