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SQ4435EY-T1_GE3 - Vishay

Description: MOSFET P-Channel 30V AEC-Q101 Qualified

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SQ4435EY-T1_GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SQ4435EY-T1_GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
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SQ4435EY-T1_GE3 Details

  • Manufacturer Part Number:

    SQ4435EY-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MS-012, SOIC, SOP-8

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    31 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    335 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    83 ns

  • Turn-on Time-Max (ton):

    34 ns

SQ4435EY-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQ4435EY-T1_GE3 is a rectangle with dimensions 2.5 mm x 1.3 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • Yes, SQ4435EY-T1_GE3 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure that the device is properly derated and that the application meets the recommended operating conditions.
  • Vishay recommends using a human body model (HBM) ESD protection circuit with a minimum of 2 kV rating to protect the SQ4435EY-T1_GE3 from electrostatic discharge. Additionally, handling the device by the body or using an anti-static wrist strap can help prevent ESD damage.
  • Vishay recommends storing SQ4435EY-T1_GE3 in a dry, cool place with a temperature range of 5°C to 30°C and relative humidity below 60%. The devices should be stored in their original packaging or in a shielded bag to prevent moisture and ESD damage.
  • While SQ4435EY-T1_GE3 is not specifically designed for humid environments, it can operate in environments with relative humidity up to 60%. However, it's essential to ensure that the device is properly sealed and that the application meets the recommended operating conditions to prevent moisture-related issues.

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SQ4435EY-T1_GE3 Overview

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