Part Image

SQ4917EY-T1_GE3 - Vishay

Description: MOSFET Dual P-Channel 60V AEC-Q101 Qualified

Download SQ4917EY-T1_GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SQ4917EY-T1_GE3 - Vishay PCB footprint - Small Outline Packages - Small Outline Packages - SOIC (NARROW) 8-LEAD
click to zoom
3D Models
SQ4917EY-T1_GE3 - Vishay  - 3D model - Small Outline Packages - SOIC (NARROW) 8-LEAD
click to zoom

SQ4917EY-T1_GE3 Details

  • Manufacturer Part Number:

    SQ4917EY-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    MS-012, SOIC, SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    25 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    142 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    32 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    61 ns

  • Turn-on Time-Max (ton):

    34 ns

SQ4917EY-T1_GE3 Frequently Asked Questions (FAQs)

  • Store the components in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C.
  • Handle the components by the body, avoiding touching the leads or electrical contacts. Use anti-static wrist straps, mats, or packaging to prevent electrostatic discharge (ESD) damage.
  • The maximum allowable voltage for SQ4917EY-T1_GE3 is 100V. Exceeding this voltage may cause permanent damage to the component.
  • Yes, SQ4917EY-T1_GE3 is rated for high-temperature applications up to 150°C. However, the component's performance and lifespan may degrade at extreme temperatures.
  • Use a soldering iron with a temperature range of 200°C to 250°C. Apply a small amount of solder paste or flux to the leads, and solder within 3-5 seconds to prevent overheating.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SQ4917EY-T1_GE3 Overview

Use the download button to access the SQ4917EY-T1_GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SQ491, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to SQ4917EY-T1_GE3

Showing 0 results

SQ4917EY-T1_GE3 Alternates

Showing results

Image Part Number Model
Part Image SQ4917CEY-T1_GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 60V, 0.048ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SQ4917EY-T1_BE3 Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 60V, 0.048ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image SQ4917CEY Vishay Intertechnologies

Power Field-Effect Transistor, 8A I(D), 60V, 0.048ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET