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SQJ910AEP-T1_GE3 - Vishay

Description: MOSFET Dual N-Channel 30V AEC-Q101 Qualified

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PCB Footprints
SQJ910AEP-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8L DUAL
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3D Models
SQJ910AEP-T1_GE3 - Vishay  - 3D model - Other - PowerPAK SO-8L DUAL
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SQJ910AEP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ910AEP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    42 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SQJ910AEP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SQJ910AEP-T1_GE3 is to store them in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%. This helps to prevent moisture absorption and ensures the component's reliability.
  • Yes, SQJ910AEP-T1_GE3 is suitable for high-frequency applications up to 1 GHz. However, it's essential to consider the component's self-resonant frequency, parasitic inductance, and capacitance when designing high-frequency circuits.
  • When soldering or reworking SQJ910AEP-T1_GE3, it's crucial to follow the recommended soldering profile, use a soldering iron with a temperature below 260°C, and avoid applying excessive force or pressure. This helps to prevent damage to the component and ensures reliable operation.
  • Yes, SQJ910AEP-T1_GE3 is compatible with lead-free soldering processes. However, it's essential to follow the recommended soldering profile and temperature guidelines to ensure reliable solder joints and prevent damage to the component.
  • The typical failure mode of SQJ910AEP-T1_GE3 is due to excessive voltage, current, or temperature stress, which can cause the component to fail open or short. Proper derating, thermal management, and protection circuits can help prevent these failure modes.

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SQJ910AEP-T1_GE3 Overview

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