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SQJ912DEP-T1_GE3 - Vishay

Description: MOSFET Automotive Dual N-Channel 40 V (D-S) 175C MOSFET PowerPAK SO-8L, 7.3 mO @ 10V mO @ 7.5V 10.2 mO @ 4.5V

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SQJ912DEP-T1_GE3 - Vishay - PCB symbol
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PCB Footprints
SQJ912DEP-T1_GE3 - Vishay PCB footprint - Other - Other - SQJ968EP-T1_GE3-1
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3D Models
SQJ912DEP-T1_GE3 - Vishay - 3D model - Other - SQJ968EP-T1_GE3-1
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SQJ912DEP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ912DEP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    18 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0073 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    44 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    85 ns

  • Turn-on Time-Max (ton):

    30 ns

SQJ912DEP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQJ912DEP-T1_GE3 is a rectangular pad with a size of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
  • The maximum allowed voltage derating for the SQJ912DEP-T1_GE3 is 80% of the rated voltage, which is 900 V. Therefore, the maximum allowed voltage is 720 V.
  • Yes, the SQJ912DEP-T1_GE3 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.
  • To ensure reliability in a humid environment, follow proper storage and handling procedures, and consider using a conformal coating or potting compound to protect the device from moisture.

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SQJ912DEP-T1_GE3 Overview

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