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SQS180ELNW-T1_GE3 - Vishay

Description: MOSFET

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SQS180ELNW-T1_GE3 Details

  • Manufacturer Part Number:

    SQS180ELNW-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    40 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    82 A

  • Drain-source On Resistance-Max:

    0.0083 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    35 pF

  • JESD-30 Code:

    S-PDSO-N8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    189 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    71 ns

  • Turn-on Time-Max (ton):

    26 ns

SQS180ELNW-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQS180ELNW-T1_GE3 is a rectangular pad with a size of 1.8 mm x 0.8 mm, with a 0.3 mm radius corner and a 0.2 mm spacing between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or a thermal interface material. Also, consider using a heat sink or a thermal management system to keep the device temperature within the recommended operating range.
  • The maximum allowable voltage for SQS180ELNW-T1_GE3 is 1.5 times the rated voltage, which is 180 V. Therefore, the maximum allowable voltage is 270 V.
  • Yes, SQS180ELNW-T1_GE3 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic inductance and capacitance, as well as the PCB layout, to minimize high-frequency losses.
  • To ensure reliability in a humid environment, follow proper storage and handling procedures, and consider using a moisture-sensitive device handling procedure. Also, ensure the device is properly soldered and sealed to prevent moisture ingress.

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SQS180ELNW-T1_GE3 Overview

Use the download button to access the SQS180ELNW-T1_GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SQS18, or try a keyword search, such as Power Field-Effect Transistors

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