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SSM3J132TU,LF - Toshiba

Description: MOSFET Small-signal MOSFET ID -5.4A, VDSS -12V

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SSM3J132TU,LF - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SSM3J132TU,LF
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SSM3J132TU,LF - Toshiba  - 3D model - SO Transistor Flat Lead - SSM3J132TU,LF
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SSM3J132TU,LF Details

  • Manufacturer Part Number:

    SSM3J132TU,LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    5.4 A

  • Drain-source On Resistance-Max:

    0.021 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    525 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3J132TU,LF Frequently Asked Questions (FAQs)

  • The recommended land pattern for SSM3J132TU,LF is a rectangular pad with a size of 1.5mm x 0.8mm, with a 0.3mm radius corner. The pad should be centered on the component and have a non-solder mask defined (NSMD) pad shape.
  • To handle thermal management, ensure good airflow around the component, and consider using a heat sink or thermal interface material (TIM) to reduce thermal resistance. The maximum junction temperature (Tj) is 150°C, and the thermal resistance (Rth(j-a)) is 25°C/W.
  • The SSM3J132TU,LF has an internal ESD protection diode, which provides a minimum of ±2kV ESD protection according to the Human Body Model (HBM) and ±200V according to the Machine Model (MM).
  • Yes, the SSM3J132TU,LF is suitable for high-frequency applications up to 1GHz. However, ensure that the PCB layout and component selection are optimized for high-frequency operation to minimize signal loss and distortion.
  • Store SSM3J132TU,LF components in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -20°C to 40°C, and the relative humidity should be below 60%.

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