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SSM3K35MFV - Toshiba

Description: N-ch MOSFET, 20 V, 0.18 A, 3.0 Ω@4V, SOT-723(VESM)

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SSM3K35MFV - Toshiba - PCB symbol
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PCB Footprints
SSM3K35MFV - Toshiba PCB footprint - Other - Other - 1-1Q1S_2-1L1S
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3D Models
SSM3K35MFV - Toshiba - 3D model - Other - 1-1Q1S_2-1L1S
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SSM3K35MFV Details

  • Manufacturer Part Number:

    SSM3K35MFV

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    VESM, 2-1L1B, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.18 A

  • Drain-source On Resistance-Max:

    4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3K35MFV Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and follow the recommended derating curves for temperature and voltage.
  • The maximum allowed voltage transient is 40V for a duration of less than 100ms, as specified in the datasheet. Exceeding this may cause damage to the device.
  • Yes, the SSM3K35MFV is qualified to AEC-Q101 standards and is suitable for high-reliability and automotive applications. However, additional testing and validation may be required.
  • Follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected package. The device has an internal ESD protection diode, but external protection is still recommended.

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SSM3K35MFV Overview

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