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SSM3K56MFV - Toshiba

Description: N-ch MOSFET, 20 V, 0.8 A, 0.235 Ω@4.5V, SOT-723(VESM)

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PCB Footprints
SSM3K56MFV - Toshiba PCB footprint - Other - Other - 1-1Q1S_2-1L1S
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3D Models
SSM3K56MFV - Toshiba  - 3D model - Other - 1-1Q1S_2-1L1S
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SSM3K56MFV Details

  • Manufacturer Part Number:

    SSM3K56MFV

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.8 A

  • Drain-source On Resistance-Max:

    0.235 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SSM3K56MFV Overview

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