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SSM5N15FE(TE85L,F) - Toshiba

Description: MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1

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SSM5N15FE(TE85L,F) - Toshiba - PCB symbol
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PCB Footprints
SSM5N15FE(TE85L,F) - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SON5-P-0.50
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3D Models
SSM5N15FE(TE85L,F) - Toshiba - 3D model - SO Transistor Flat Lead - SON5-P-0.50
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SSM5N15FE(TE85L,F) Details

  • Manufacturer Part Number:

    SSM5N15FE(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Drain Current-Max (ID):

    0.1 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Time@Peak Reflow Temperature-Max (s):

    30

SSM5N15FE(TE85L,F) Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • The device requires a bias voltage of 5V to 15V on the gate pin, and a current limit resistor to prevent excessive current. A 1kΩ to 10kΩ resistor is recommended.
  • The maximum allowed power dissipation for the SSM5N15FE is 125W, but this can be increased with proper heat sinking and thermal management.
  • Yes, the SSM5N15FE is suitable for high-frequency switching applications up to 100kHz, but the user must ensure proper PCB layout, decoupling, and snubber circuits to minimize ringing and EMI.
  • Toshiba recommends using a voltage clamp or TVS diode to protect the device from overvoltage conditions, and a current sense resistor or fuse to detect overcurrent conditions.

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SSM5N15FE(TE85L,F) Overview

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