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SSM6K514NU,LF - Toshiba

Description: MOSFET Small Low ON Resistane MOSFETs

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PCB Footprints
SSM6K514NU,LF - Toshiba PCB footprint - Other - Other - UDFN6B
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SSM6K514NU,LF - Toshiba  - 3D model - Other - UDFN6B
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SSM6K514NU,LF Details

  • Manufacturer Part Number:

    SSM6K514NU,LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-1220, UDFN6B, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    49.1 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.0173 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    26 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.25 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM6K514NU,LF Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the IC, and a 2-layer or 4-layer PCB with a solid ground plane is recommended to reduce thermal resistance. A minimum of 2 oz copper thickness is recommended for the PCB.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator or a low-dropout regulator (LDO) is recommended to regulate the input voltage. The biasing circuit should be designed to provide a stable voltage reference and a low impedance output.
  • The device is sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Handle the device in an ESD-protected environment, and use ESD-protective packaging and handling materials. Avoid touching the device pins or leads, and use an anti-static wrist strap or mat when handling the device.
  • The optimal input capacitance value depends on the input voltage, output current, and output voltage ripple requirements. A general guideline is to use a capacitance value between 1uF to 10uF, with a voltage rating that matches the input voltage. A larger capacitance value can provide better ripple rejection, but may increase the startup time and inrush current.
  • The device has a maximum junction temperature rating of 150°C. Ensure good airflow around the device, and use a heat sink or thermal interface material (TIM) to reduce the thermal resistance. The PCB layout should be designed to minimize thermal resistance and ensure good heat dissipation.

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SSM6K514NU,LF Overview

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