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SSM6L14FE(TE85L,F) - Toshiba

Description: MOSFET LowON Res MOSFET ID=0.8A VDSS=20V

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SSM6L14FE(TE85L,F) - Toshiba - PCB symbol
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PCB Footprints
SSM6L14FE(TE85L,F) - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - ES6 (SON6-P-0.50)
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3D Models
SSM6L14FE(TE85L,F) - Toshiba - 3D model - SO Transistor Flat Lead - ES6 (SON6-P-0.50)
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SSM6L14FE(TE85L,F) Details

  • Manufacturer Part Number:

    SSM6L14FE(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • Drain Current-Max (ID):

    0.8 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Time@Peak Reflow Temperature-Max (s):

    30

SSM6L14FE(TE85L,F) Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to stabilize the input voltage.
  • The maximum allowable power dissipation is 1.5W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
  • The device is rated for operation up to 125°C. However, the maximum junction temperature should not exceed 150°C to ensure reliable operation.
  • The device is sensitive to ESD. Handling the device by its package and using an ESD wrist strap or mat is recommended. Anti-static packaging and storage are also recommended.

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SSM6L14FE(TE85L,F) Overview

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