SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min:
20 V
Drain Current-Max (ID):
0.5 A
Drain-source On Resistance-Max:
0.85 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
7.3 pF
JESD-30 Code:
R-PDSO-F6
Number of Elements:
2
Number of Terminals:
6
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs):
0.15 W
Surface Mount:
YES
Terminal Form:
FLAT
Terminal Position:
DUAL
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SSM6L36FE,LM Frequently Asked Questions (FAQs)
A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are recommended for optimal thermal performance.
Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to maintain a safe junction temperature. Monitor the device's thermal resistance (RθJA) and ensure it is within the specified range.
Handle the device by the body, avoiding touching the leads or pins. Store the device in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and handling procedures to prevent electrostatic discharge (ESD) damage.
Yes, the SSM6L36FE,LM is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards (e.g., AEC-Q100). Consult with Toshiba's application engineers for guidance.
Verify the input voltage, output voltage, and load current are within the specified ranges. Check for proper PCB layout, decoupling, and filtering. Use an oscilloscope to monitor the output voltage and identify any oscillations or noise. Consult the datasheet and application notes for troubleshooting guidelines.
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SSM6L36FE,LM Overview
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